Deposition methods utilizing microwave excitation

ABSTRACT

The invention includes a deposition apparatus having a reaction chamber, and a microwave source external to the chamber. The microwave source is configured to direct microwave radiation toward the chamber. The chamber includes a window through which microwave radiation from the microwave source can pass into the chamber. The invention also includes deposition methods (such as CVD or ALD methods) in which microwave radiation is utilized to activate at least one component within a reaction chamber during deposition of a material over a substrate within the reaction chamber.

TECHNICAL FIELD

[0001] The invention pertains to deposition methods utilizing microwaveexcitation, and in particular applications pertains to chemical vapordeposition (CVD) methods and atomic layer deposition (ALD) methods. Theinvention also pertains to apparatuses which can be utilized fordeposition methods.

BACKGROUND OF THE INVENTION

[0002] Semiconductor processing in the fabrication of integratedcircuitry involves the deposition of layers on semiconductor substrates.Exemplary processes include chemical vapor deposition (CVD) and atomiclayer deposition (CVD). CVD and ALD can be conducted within chambers orreactors which retain a single substrate upon a wafer holder orsusceptor. One or more precursor gasses are typically provided to ashower head within the chamber which is intended to uniformly providethe reactant gasses substantially homogeneously over the outer surfaceof the wafer. The precursors react or otherwise manifest in a depositionof a suitable layer atop the substrate. Plasma enhancement may or maynot be utilized. If plasma enhancement is utilized, the plasma can begenerated and maintained either directly within the chamber or remotelytherefrom.

[0003] In certain deposition processes, including ALD and CVD, it can bedesirable to provide activated species within a reaction chamber. Theactivated species can be formed from a non-activated component byexposing the component to an energy that the component can absorb. Uponabsorbing the energy, an energy state of the component can be lifted sothat the component becomes energetically excited, and accordinglybecomes an activated species.

[0004] One method of providing an activated species within a reactionchamber is to generate the species remotely from the chamber andsubsequently flow the species into the chamber. The remote generationcan allow a specific apparatus to be set up for generation of theactivated species, which can be much simpler than attempting to generatean activated species within a reaction chamber. However, a problem withremote generation is that an activated species can become deactivatedand/or recombined in route from the apparatus in which it is generatedto a reaction chamber. It is therefore desirable to develop new methodsfor providing activated species in reaction chambers, and to developapparatusses suitable for the methods.

[0005] The invention was motivated in overcoming the above-describeddrawbacks, although it is in no way so limited. The invention is onlylimited by the accompanying claims as literally worded withoutinterpretative or other limiting reference to the specification ordrawings, and in accordance with the doctrine of equivalents.

SUMMARY OF THE INVENTION

[0006] In one aspect, the invention includes a deposition method whichcomprises microwave excitation of a component within a reaction chamberduring deposition of a material over a substrate within the reactionchamber.

[0007] In one aspect, the invention includes a deposition method whereinan apparatus is provided which comprises a reaction chamber and amicrowave source external to the chamber. The reaction chamber includesa window through which microwave radiation can pass. A substrate isplaced within the reaction chamber, and one or more microwave-inducibleconstituents is flowed into the reaction chamber. Also, one or moreprecursors are flowed into the reaction chamber. While the substrate andthe one or more microwave-inducible constituents are within the reactionchamber, at least one of the microwave-inducible constituents isactivated with microwave radiation to form at least one activatedspecies (such activation can include molecular fragmentation). At leastone of the one or more precursors is reacted with the activated species,and at least a component of the at least one of the more precursors isdeposited onto the substrate.

[0008] In one aspect, the invention encompasses a deposition apparatuswhich includes a reaction chamber, and a microwave source external tothe chamber. The microwave source is configured to direct microwaveradiation toward the chamber. The chamber includes a window throughwhich microwave radiation from the microwave source can pass into thechamber.

BRIEF DESCRIPTION OF THE DRAWINGS

[0009] Preferred embodiments of the invention are described below withreference to the following accompanying drawings.

[0010]FIG. 1 is a diagrammatic cross-sectional view of an apparatuswhich can be utilized in particular aspects of the invention.

[0011]FIG. 2 is a diagrammatic top view illustrating an exemplaryrelationship of a microwave source relative to a substrate in aparticular aspect of the present invention.

[0012]FIG. 3 is a diagrammatic side view of a substrate treated withmicrowave radiation in accordance with an aspect of the presentinvention, and illustrates an exemplary direction of travel of amicrowave beam.

[0013]FIG. 4 is a top-view of the FIG. 3 construction, and furtherillustrates a direction of travel of the microwave beam in accordancewith an exemplary aspect of the invention.

[0014]FIG. 5 is a top view of a substrate treated in accordance with anaspect of the present invention, and illustrates another exemplarydirection of travel of a beam of microwave radiation in accordance withan aspect of the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0015] In particular aspects, the present application pertains to atomiclayer deposition (ALD) technology. ALD technology typically involvesformation of successive atomic layers on a substrate. Such layers maycomprise, for example, an epitaxial, polycrystalline, and/or amorphousmaterial. ALD may also be referred to as atomic layer epitaxy, atomiclayer processing, etc.

[0016] The deposition methods herein are described in the context offormation of materials on one or more semiconductor substrates. In thecontext of this document, the term “semiconductor substrate” or“semiconductive substrate” is defined to mean any constructioncomprising semiconductive material, including, but not limited to, bulksemiconductive materials such as a semiconductive wafer (either alone orin assemblies comprising other materials thereon), and semiconductivematerial layers (either alone or in assemblies comprising othermaterials). The term “substrate” refers to any supporting structure,including, but not limited to, the semiconductive substrates describedabove. Also in the context of the present document, “metal” or “metalelement” refers to the elements of Groups IA, IIA, and IB to VIIIB ofthe periodic table of the elements along with the portions of GroupsIIIA to VIA designated as metals in the periodic table, namely, Al, Ga,In, TI, Ge, Sn, Pb, Sb, Bi, and Po. The Lanthanides and Actinides areincluded as part of Group IIIB. “Non-metals” refers to the remainingelements of the periodic table.

[0017] Described in summary, ALD includes exposing an initial substrateto a first chemical species to accomplish chemisorption of the speciesonto the substrate. Theoretically, the chemisorption forms a monolayerthat is uniformly one atom or molecule thick on the entire exposedinitial substrate. In other words, a saturated monolayer. Practically,as further described below, chemisorption might not occur on allportions of the substrate. Nevertheless, such an imperfect monolayer isstill a monolayer in the context of this document. In many applications,merely a substantially saturated monolayer may be suitable. Asubstantially saturated monolayer is one that will still yield adeposited layer exhibiting the quality and/or properties desired forsuch layer.

[0018] The first species is purged from over the substrate and a secondchemical species is provided to chemisorb onto the first monolayer ofthe first species. The second species is then purged and the steps arerepeated with exposure of the second species monolayer to the firstspecies. In some cases, the two monolayers may be of the same species.Also, a third species or more may be successively chemisorbed and purgedjust as described for the first and second species. It is noted that oneor more of the first, second and third species can be mixed with inertgas to speed up pressure saturation within a reaction chamber.

[0019] Purging may involve a variety of techniques including, but notlimited to, contacting the substrate and/or monolayer with a carrier gasand/or lowering pressure to below the deposition pressure to reduce theconcentration of a species contacting the substrate and/or chemisorbedspecies. Examples of carrier gases include N₂, Ar, He, Ne, Kr, Xe, etc.Purging may instead include contacting the substrate and/or monolayerwith any substance that allows chemisorption byproducts to desorb andreduces the concentration of a species preparatory to introducinganother species. A suitable amount of purging can be determinedexperimentally as known to those skilled in the art. Purging time may besuccessively reduced to a purge time that yields an increase in filmgrowth rate. The increase in film growth rate might be an indication ofa change to a non-ALD process regime and may be used to establish apurge time limit.

[0020] ALD is often described as a self-limiting process, in that afinite number of sites exist on a substrate to which the first speciesmay form chemical bonds. The second species might only bond to the firstspecies and thus may also be self-limiting. Once all of the finitenumber of sites on a substrate are bonded with a first species, thefirst species will often not bond to other of the first species alreadybonded with the substrate. However, process conditions can be varied inALD to promote such bonding and render ALD not self-limiting.Accordingly, ALD may also encompass a species forming other than Onemonolayer at a time by stacking of a species, forming a layer more thanone atom or molecule thick. The various aspects of the present inventiondescribed herein are applicable to any circumstance where ALD may bedesired. It is further noted that local chemical reactions can occurduring ALD (for instance, an incoming reactant molecule can displace amolecule from an existing surface rather than forming a monolayer overthe surface). To the extent that such chemical reactions occur, they aregenerally confined within the uppermost monolayer of a surface.

[0021] Traditional ALD can occur within an frequently-used ranges oftemperature and pressure and according to established purging criteriato achieve the desired formation of an overall ALD layer one monolayerat a time. Even so, ALD conditions can vary greatly depending on theparticular precursors, layer composition, deposition equipment, andother factors according to criteria known by those skilled in the art.Maintaining the traditional conditions of temperature, pressure, andpurging minimizes unwanted reactions that may impact monolayer formationand quality of the resulting overall ALD layer. Accordingly, operatingoutside the traditional temperature and pressure ranges may riskformation of defective monolayers.

[0022] The general technology of chemical vapor deposition (CVD)includes a variety of more specific processes, including, but notlimited to, plasma enhanced CVD and others. CVD is commonly used to formnon-selectively a complete, deposited material on a substrate. Onecharacteristic of CVD is the simultaneous presence of multiple speciesin the deposition chamber that react to form the deposited material.Such condition is contrasted with the purging criteria for traditionalALD wherein a substrate is contacted with a single deposition speciesthat chemisorbs to a substrate or previously deposited species. An ALDprocess regime may provide a simultaneously contacted plurality ofspecies of a type or under conditions such that ALD chemisorption,rather than CVD reaction occurs. Instead of reacting together, thespecies may chemisorb to a substrate or previously deposited species,providing a surface onto which subsequent species may next chemisorb toform a complete layer of desired material.

[0023] Under most CVD conditions, deposition occurs largely independentof the composition or surface properties of an underlying substrate. Bycontrast, chemisorption rate in ALD might be influenced by thecomposition, crystalline structure, and other properties of a substrateor chemisorbed species. Other process conditions, for example, pressureand temperature, may also influence chemisorption rate.

[0024] In particular aspects, the invention encompasses methods ofimparting microwave excitation to components within a reaction chamberduring CVD or ALD processes. An apparatus which can be utilized in suchmethodology is illustrated in FIG. 1 as apparatus 10.

[0025] Apparatus 10 comprises a reaction chamber 12 and a microwavesource 14. The microwave source is configured to direct microwaves(illustrated by wavy lines 16, only some of which are labeled) towardreaction chamber 12. Microwaves are to be understood as radiation havinga wavelength of from about 10 cm to about 0.1 cm.

[0026] Microwave source 14 can comprise, for example, a phased arrayantenna, or other configurations configured to emit a phased array ofmicrowave radiation. Microwave source 14 can generate microwaves, or canbe utilized to direct microwaves that have been generated remotely fromsource 14.

[0027] Microwave source 14 is shown electrically connected with amicrowave generator and/or power controller 18 through an interconnect20. Microwave generator and/or power controller 18 can be utilized toadjust the phase of microwaves generated along different portions of theexpanse of source 14. For instance, microwaves at one portion of theexpanse of source 14 can be tuned differently relative to microwavesalong another portion of the expanse to generate sweeping waves ofmicrowave radiation. Additionally and/or alternatively, controllerand/or generator 18 can be utilized for emitting timed pulses ofmicrowave radiation from source 14.

[0028] Reaction chamber 12 comprises a wall 22 extending around themajority of the reaction chamber periphery. Wall 22 can be formed of,for example, appropriate metals. Reaction chamber 12 also comprises awindow 24 extending across a portion of the reaction chamber proximatemicrowave source 14. Window 24 comprises a material at least partiallytransparent to microwave radiation, and in particular applications cancomprise, consist essentially of, or consist of one or more of quartz,mica and some plastics. In operation, microwave radiation 16 passes fromsource 14 through window 24 and into chamber 12.

[0029] A substrate holder 26 is provided within chamber 12, and suchretains a substrate 28 within the chamber. Substrate 28 can comprise,for example, a semiconductor wafer substrate. In the shown embodiment,substrate 28 is within a path of the microwave radiation 16 directedinto chamber 12.

[0030] Substrate holder 26 would typically be mounted within chamber 12with various support structures to retain holder 26 within a desiredlocation of chamber 22. The supporting structures are not shown in theschematic diagram of FIG. 1 to simplify the illustration.

[0031] Substrate holder 26 can be configured to regulate a temperatureof the substrate 28 retained by holder 26. Accordingly, substrate holder26 can comprise a heater utilized for heating the retained substrate.Additionally and/or alternatively, holder 26 can be coupled with acooling apparatus and utilized for cooling a substrate retained thereby.It is also possible that a temperature regulating mechanism can beprovided in addition to wafer holder 26, and holder 26 can be utilizedfor thermal conduction between substrate 28 and the temperatureregulating mechanism.

[0032] In the shown application, window 24 is at a top of chamber 12 andsubstrate holder 26 is provided beneath the window. It is to beunderstood that the invention can encompass other applications in whichthe window is additionally and/or alternatively provided along a side orbottom of chamber 12, and in which a microwave source is alsoalternatively and/or additionally provided along either a side or bottomof the reaction chamber. However, the shown application of the inventioncan be a preferred application, in that a substrate 28 can be providedin a path of microwave radiation directed into chamber 12, and can beretained on holder 26 via gravity.

[0033] It can be advantageous to connect window 24 to sidewalls 22through an elastomeric material 30 due to differences in the thermalexpansion of window 24 relative to sidewalls 22. The elastomericmaterial is preferably compatible with process chemistries utilizedwithin chamber 12 and can comprise, for example, silicone-basedmaterials.

[0034] Apparatus 10 comprises an inlet port 32 extending throughmicrowave source 14, and also through window 14. Port 32 can comprise,for example, quartz. Inlet port 32 terminates in an opening 34 beneathwindow 24, and is in fluid connection with a source 37 of one or morematerials which are to be flowed into chamber 12. It should beunderstood that even though only one inlet port and source are shown inthe apparatus 10 of FIG. 1, numerous inlet ports can be provided, andthe various inlet ports can be in connection with more than one sourceof material.

[0035] Reaction chamber 12 has an outlet 42 extending therein, and inoperation materials flow into chamber 12 from inlet port 32, and thenflow out of the chamber through outlet 42. A pump can be providedrelative to outlet 42 to aid in withdrawing materials from withinchamber 12, and such can be particularly useful in ALD applications inwhich one or more materials are to be pulsed into and out of chamber 12.Materials exiting from chamber 12 are illustrated diagrammatically withan arrow 44. Although only one outlet is illustrated, it is to beunderstood that additional outlets can be provided.

[0036] A gas dispersion plate 36 (or diffuser) is provided beneath inletport 32. Plate 36 has a plurality of openings extending therethrough toallow gaseous material (illustrated diagrammatically by arrows 38, onlyone of which is labeled) to flow through the gas dispersion plate.Accordingly, gaseous materials entering chamber 22 through inlet port 32flow across and through gas dispersion plate 36. The gas dispersionplate is preferably formed of material which is at least partiallytransparent to microwave radiation, and can, in particular applications,comprise, consist essentially of, or consist of quartz, mica or plastic.Gas dispersion plate 36 can be held within a desired orientation inchamber 12 utilizing various support structures (not shown).

[0037] A radio frequency (RF) shield (or cover) 40 is provided over andaround microwave source 14 to alleviate or prevent stray microwaveradiation from being scattered into an environment proximate apparatus10. In the shown embodiment, source 37 is external to cover 40, andAccordingly materials are flowed from source 37 through cover 40 andinto chamber 12. The invention can encompass other applications in whichsource 37 is provided beneath the RF shield.

[0038] In operation, the materials flowed into chamber 12 preferablycomprise at least one component which can be excited with microwaveradiation. Components which can be excited with microwave radiation canbe referred to as microwave-inducible constituents. Exemplarymicrowave-inducible constituents include O, H and N. Such constituentscan be flowed into chamber 12 as diatomic species (specifically, O₂, H₂,and N₂), or as other species. The microwave-induced constituents flowthrough the microwave radiation 16 from source 14, and can thereby beactivated to form at least one microwave excited component (which canalso be referred to as an activated species). The activated species can,in particular applications, define a plasma generated by the microwaveradiation. In other applications, the activated species can benon-plasma species. In any event, the microwave excitation of thevarious components can enhance reactivity of the components.

[0039] The microwave excited components can deposit onto substrate 28 toform a layer on the substrate. For instance, if oxygen is a microwaveactivated component within chamber 12, the activated oxygen can interactwith a material on substrate 28 to form an oxide. In exemplaryapplications, substrate 28 can comprise a metal-containing surface (suchas, for example, a titanium-containing surface), and activated oxygencan react with such surface to form a metal oxide (such as, for example,titanium oxide). In other applications, the microwave excited componentcan comprise nitrogen, and such component can react with a material onthe upper surface of substrate 28 (such as metal, with an exemplarymetal being titanium) to form a nitride species across the upper surface(such as, for example, a metal nitride, with an exemplary metal nitridebeing titanium nitride).

[0040] In applications in which a microwave excited component reactsdirectly with a surface of substrate 28, the component can be on orotherwise associated with a surface of the substrate as the component issubjected to the microwave excitation. Such can be advantageous inapplications in which a microwave excited component has a very shortlifetime.

[0041] In particular applications, various precursors can be flowed intoreaction chamber 12 in addition to the microwave-inducible constituents.The precursors can react with microwave excited components of themicrowave-inducible constituents to form materials which ultimatelydeposit over a surface of substrate 28.

[0042] The precursors can comprise, for example, metallo-organicmaterials and can react with the microwave excited components togenerate metals which ultimately deposit over a surface of substrate 28.If the precursors comprise metallo-organic precursors, the precursorscan bond to a surface of substrate 28 prior to reacting with themicrowave excited components and/or can react with the microwave-excitedcomponents to form metallic materials which thereafter accumulate onsubstrate 28.

[0043] In an exemplary application, the microwave excited component cancomprise O, and such can react with a metallo-organic precursor tooxidize the organic component of the precursor and cleave such from themetallic component which thereafter accumulates on a surface ofsubstrate 28. Alternatively, the metallo-organic precursor can bond toan upper surface of substrate 28 prior to reaction with the O, and the Ocan thereafter cleave the organic component of the precursor to leavethe metal as a deposit over a surface of substrate 28. In furtheraspects of the invention, the oxygen can react with the metal eitherduring or after the cleavage of the organic material, to form a metaloxide which ultimately accumulates as a deposit over a surface ofsubstrate 28. Similarly, if the microwave excited component is N, suchcan form a metal nitride over a surface of substrate 28. If themicrowave excited component is H, such can reduce various portions of aprecursor to leave a component of the precursor which ultimatelydeposits over a surface of substrate 28.

[0044] If the microwave excited component is part of a plasma, such canbe utilized in combination with plasma-enhanced chemical vapordeposition, or can be utilized for dry etching of various materialsassociated with substrate 28..

[0045] It is noted that the microwave excited component can be providedas part of a compound which includes other atoms in addition to themicrowave-excited component. The component can cleave from the compoundas a result of the microwave activation and/or as a result of reactingwith precursors within the reaction chamber, and can thereafter beincorporated into a deposit over a surface of substrate 28. Accordingly,the deposited material over substrate 28 can comprise a product whichincludes at least a portion of a microwave excited component formedwithin chamber 12.

[0046] In applications in which an activated species is formed bymicrowave excitation of a constituent, and in which the activatedspecies reacts with one or more precursors to form one or morecomponents which are deposited over substrate 28, the reacting with theprecursors can occur before, after, or during deposition of thecomponents onto a surface of substrate 28.

[0047] The reaction of the activated species with the precursor canbreak the precursor to form a fragment of the precursor which isultimately deposited onto substrate 28 (such as, for example, can breaka metallo-organic precursor into a metal-containing fragment which isultimately deposited onto substrate 28). Accordingly, a materialdeposited over substrate 28 can comprise a fragment of a precursorrather than an entirety of a precursor, in particular applications.Further, the microwave activated component can react with the fragmentto form a new species which deposits over substrate 28, such as, forexample, in applications in which the microwave activated componentcomprises oxygen or nitrogen, and reacts with a metal-containingprecursor to form a metal oxide or metal nitride which is ultimatelydeposited over substrate 28.

[0048] The methodology described herein can be utilized in, for example,CVD or ALD applications. If the methodology is utilized in ALDapplications, a particular reaction sequence can comprise pulsing afirst component into reaction chamber and forming a monolayer over asubstrate from the first component. The first component is then purgedfrom the reaction chamber and a second component is thereafter pulsedinto the reaction chamber to form a second monolayer over the monolayerformed from the first component. Subsequently, the second component canbe purged from the reaction chamber, and the first component canthereafter be again pulsed into the reaction chamber to form anothermonolayer over the monolayer formed from the second component.Accordingly, the first and second components can be sequentially pulsedand purged from the reaction chamber.

[0049] A microwave activated species can be formed from one or both ofthe first and second components during the pulsing of the componentsinto the reaction chamber, or can be formed in addition to one or bothof the first and second components as the components are pulsed into thereaction chamber. In any event, it can be advantageous for a microwavepulse utilized during an ALD process to be approximately as quick as asequential pulse of a component into the reaction chamber. In otherwords, if a pulse of a component into a reaction chamber is about 2seconds, it can be advantageous for the microwave pulse to be also about2 seconds so that the pulse of microwave radiation can substantiallycoincide with the pulse of the component (with the term “substantially”coincide being utilized to indicate that the two pulses coincide withinerrors of detection). Such can be particularly advantageous if only oneof the pulses associated with an ALD process is to be microwave induced,and the other pulse is not. In such applications, it can be desired toutilize a microwave source with a very rapid response time. Suitablemicrowave sources are, for example, phased array antennas withappropriate microwave generators and controllers.

[0050] The microwave source 14 utilized in various aspects of theinvention can be an antenna which extends across an entirety of thesubstrate 28. For instance, FIG. 2 illustrates an exemplary source 14(the periphery of which is shown with a solid line), superimposed overan exemplary substrate 28 (the periphery of which is shown by a dashedline). The microwave source 14 extends across an entirety of a surfaceof substrate 28, and accordingly microwave radiation from source 14 cansimultaneously be directed across the entirety of substrate 28. Althoughthe shown microwave source 14 has a rectangular shape, it is to beunderstood that the microwave source can have other shapes, such as, forexample, a circular shape.

[0051] Microwave radiation emitted from source 14 can impact a surfaceof substrate 28, and such can be useful in applications in whichactivated species having relatively short lifetimes are formed from themicrowave radiation and utilized for CVD or ALD processes. If a phasedarray antenna is utilized as the microwave source, an orientation of themicrowave radiation relative to substrate 28 can be controlled. Such isillustrated in FIG. 3 wherein a substrate 28 is illustrated incross-sectional view, together with a beam 50 (schematically illustratedwith a dashed box) of microwave radiation 16. The beam of microwaveradiation 16 is swept linearly across substrate 28 as illustrated by anarrow 52. Such can be accomplished with phase control of microwaveradiation emitted from a phased array antenna utilized as the microwavesource (14 of FIG. 1).

[0052]FIG. 4 illustrates a top view of the FIG. 3 diagram to furthershow the linear travel of beam 50 across substrate 28 as well as toillustrate that beam 50 can extend transversely across a full width ofsubstrate 28 (in other words, can extend across a full diameter of theshown circular substrate).

[0053]FIGS. 3 and 4 illustrate that microwave radiation emitted into areaction chamber can be emitted along a first axis (the axes ofradiation 16), and swept along a second axis (axis 52), with the secondaxis of the shown embodiment being substantially perpendicular to theaxis along which the radiation is directed. The term “substantiallyperpendicular” is used to indicate that the axis along which theradiation is swept is perpendicular to the axis along which theradiation is directed within errors of measurement.

[0054] In applications in which source 14 (FIG. 1) comprises a phasedarray antenna, the microwave radiation from such source can be sweptacross an entirety of a surface of a substrate 28 utilizing methodologyof FIG. 4. Alternatively, the radiation can be directed toward an entiresurface of substrate 28 by simply simultaneously exposing the wholesurface of substrate to microwave radiation.

[0055] Another method for directing microwave radiation across an entiresurface of substrate 28 is shown in FIG. 5. Specifically, the beam 50 ofthe radiation extends radially from a center of a circular substrate toan edge, and is swept along a rotational axis 54 to cover an entirety ofthe substrate.

[0056] An advantage of having a beam sweep a substrate (as shown in theexemplary embodiments of FIGS. 3, 4 and 5) can be that such can enhancethe uniformity of deposition of a material over a substrate during CVDor ALD.

[0057] Incorporation of microwave excitation into CVD and/or ALDprocesses can enable reaction chambers to be formed smaller than thosecurrently available. Smaller chambers can be advantageous in reducing avolume within the reaction chambers, which can particularly assist ALDprocesses in allowing faster purging of the reaction chambers.

[0058] In compliance with the statute, the invention has been describedin language more or less specific as to structural and methodicalfeatures. It is to be understood, however, that the invention is notlimited to the specific features shown and described, since the meansherein disclosed comprise preferred forms of putting the invention intoeffect. The invention is, therefore, claimed in any of its forms ormodifications within the proper scope of the appended claimsappropriately interpreted in accordance with the doctrine ofequivalents.

1. A deposition method comprising microwave excitation of a componentwithin a reaction chamber during deposition of a material over asubstrate within the reaction chamber; the excitation resulting fromphased array microwave radiation passing into the reaction chamber. 2.The method of claim 1 further comprising: flowing a precursor into thereaction chamber; and reacting the precursor with the microwave excitedcomponent to form the material.
 3. The method of claim 2 wherein theprecursor bonds to the substrate and thereafter reacts with themicrowave excited component to form the material deposited on thesubstrate.
 4. The method of claim 2 wherein the precursor reacts withthe microwave excited component to form the material which thereafteraccumulates on the substrate.
 5. The method of claim 1 wherein thecomponent is associated with a surface of the substrate during themicrowave excitation.
 6. The method of claim 1 wherein the component isnot on a surface of the substrate during the microwave excitation. 7.The method of claim 1 wherein the microwave excited component is part ofa plasma within the reaction chamber.
 8. The method of claim 1 whereinthe microwave excited component is selected from the group consisting ofH, O and N.
 9. The method of claim 1 wherein the material deposited overthe substrate comprises a product which includes at least a portion ofthe microwave excited component.
 10. The method of claim 1 wherein thematerial deposited over the substrate does not comprise the microwaveexcited component.
 11. The method of claim 1 wherein the depositionmethod is a chemical vapor deposition method.
 12. The method of claim 1wherein the deposition method is an atomic layer deposition method. 13.The method of claim 1 wherein the deposition method is an atomic layerdeposition method, the method further comprising: sequentially pulsingfirst and second components into the reaction chamber and purging thecomponents from the reaction chamber between the sequential pulses; themicrowave excited component being at least one of the first and secondcomponents; and the microwave excitation resulting from pulses ofmicrowave radiation into the chamber; the pulses of microwave radiationsubstantially coinciding with the pulses of one or both of the first andsecond components into the reaction chamber.
 14. A deposition method,comprising: providing an apparatus comprising a reaction chamber and amicrowave source external to the chamber; the reaction chambercomprising a window through which microwave radiation can pass; passingmicrowaves from the source, through the window, and into the chamber;placing a substrate within the reaction chamber; flowing one or morematerials within the reaction chamber and through the microwaves; anddepositing at least a component of the one or more materials onto thesubstrate.
 15. The method of claim 14 wherein the microwave radiation isassociated with a beam that is emitted along a first axis into thechamber and swept along a second axis within the chamber.
 16. The methodof claim 14 wherein the microwave radiation is associated with a beamthat is emitted along a first axis into the chamber and swept along asecond axis within the chamber, the second axis being a linear axis. 17.The method of claim 14 wherein the microwave radiation is associatedwith a beam that is emitted along a first axis into the chamber andswept along a second axis within the chamber, the second axis being arotational axis.
 18. The method of claim 14 wherein the window comprisesquartz, mica or plastic.
 19. The method of claim 14 wherein themicrowave source passes a phased array of microwaves through the windowand into the chamber.
 20. The method of claim 14 wherein the substrateis a semiconductor substrate.
 21. The method of claim 14 wherein thedepositing comprises chemical vapor deposition.
 22. The method of claim14 wherein the depositing comprises atomic layer deposition.
 23. Themethod of claim 14 wherein the materials flowed through the microwavescomprise a metal-containing material and oxygen, and wherein thedepositing forms an oxide of the metal over the substrate.
 24. Themethod of claim 14 wherein the materials flowed through the microwavescomprise a metal-containing material and nitrogen, and wherein thedepositing forms an nitride of the metal over the substrate.
 25. Themethod of claim 14 wherein the materials flowed through the microwavescomprise a metal-containing material and hydrogen, and wherein thedepositing forms a film comprising the metal of the metal-containingmaterial over the substrate.
 26. The method of claim 14 wherein thematerials flowed through the microwaves comprise a titanium-containingmaterial and oxygen, and wherein the depositing forms titanium oxideover the substrate.
 27. The method of claim 14 wherein the materialsflowed through the microwaves comprise a titanium-containing materialand nitrogen, and wherein the depositing forms titanium nitride over thesubstrate.
 28. A deposition method, comprising: providing an apparatuscomprising a reaction chamber and a microwave source external to thechamber; the reaction chamber comprising a window through whichmicrowave radiation can pass; placing a substrate within the reactionchamber; flowing one or more one microwave-inducible constituents intothe reaction chamber; flowing one or more precursors into the reactionchamber; while the substrate and the one or more microwave-inducibleconstituents are within the reaction chamber, activating at least one ofthe microwave-inducible constituents with microwave radiation to form atleast one activated species; depositing at least a component of at leastone of the one or more precursors onto the substrate; and reacting theat least one of the one or more precursors with the activated species,the reacting occurring at one or more of before, after and during thedepositing.
 29. The method of claim 28 wherein the reacting occursbefore the depositing.
 30. The method of claim 28 wherein the reactingoccurs after the depositing.
 31. The method of claim 28 wherein thereacting occurs during the depositing.
 32. The method of claim 28wherein the window comprises quartz, mica or plastic.
 33. The method ofclaim 28 wherein the microwave source comprises a phased array microwaveantenna.
 34. The method of claim 28 wherein the microwave-inducibleconstituent is selected from the group consisting of O, H, and N. 35.The method of claim 28 wherein the at least one activated species ispart of a plasma generated from the microwave radiation.
 36. The methodof claim 28 wherein: the microwave-inducible constituent is selectedfrom the group consisting of O, H, and N; the deposited componentcomprises fragment of the precursor, but not an entirety of theprecursor; and the fragment is formed when the at least one activatedspecies reacts with the at least one precursor.
 37. The method of claim28 wherein the microwave source extends across an expanse and generatesmicrowaves along the expanse, the microwaves along one portion of theexpanse being selectively tuned relative to the microwaves along adifferent portion of the expanse.
 38. The method of claim 28 wherein themicrowave source extends across an expanse and generates microwavesalong the expanse, the microwaves along one portion of the expanse beingselectively tuned relative to the microwaves along a different portionof the expanse; and wherein the tuned microwaves form a band ofradiation which sweeps across a surface of the substrate during thedepositing.
 39. A deposition method, comprising: providing an apparatuscomprising a reaction chamber; a microwave source external to thechamber, and an inlet port extending through the microwave source andinto the reaction chamber; the reaction chamber comprising a windowthrough which microwave radiation can pass, and the inlet port extendingthrough the window and terminating in an opening under the window; theapparatus further comprising a gas dispersion plate beneath the opening;passing microwaves from the source, through the window, through thedispersion plate, and into the chamber; placing a substrate within thereaction chamber and under the dispersion plate; flowing one or morematerials through the inlet port, across and through the dispersionplate, and into the reaction chamber; the one or more materials beingsubjected to the microwaves while in the reaction chamber; anddepositing at least a component of the one or more materials onto thesubstrate.
 40. The deposition method of claim 39 wherein the windowcomprises quartz, mica or plastic.
 41. The deposition method of claim 39wherein the window consists essentially of quartz.
 42. The depositionmethod of claim 39 wherein the gas dispersion plate comprises quartz,mica or plastic; and has a plurality of openings extending therethrough.43. The deposition method of claim 39 wherein the gas dispersion plateconsists essentially of quartz having a plurality of openings extendingtherethrough.
 44. The deposition method of claim 39 wherein the windowand gas dispersion plate consist essentially of quartz.
 45. Thedeposition method of claim 39 wherein the microwave source comprises aphased array antenna.
 46. The deposition method of claim 39 wherein themicrowave source extends across an expanse and generates microwavesalong the expanse, the microwaves along one portion of the expanse beingselectively tuned relative to the microwaves along a different portionof the expanse.
 47. The deposition method of claim 39 wherein themicrowave source extends across an expanse and generates microwavesalong the expanse, the microwaves along one portion of the expanse beingselectively tuned relative to the microwaves along a different portionof the expanse; and wherein the tuned microwaves form a band ofradiation which sweeps across a surface of the substrate during thedepositing.
 48. A deposition apparatus, comprising: a reaction chamber,a microwave source external to the chamber and configured to directmicrowave radiation toward the chamber; and a window in a side of thereaction chamber through which microwave radiation from the microwavesource can pass into the chamber.
 49. The apparatus of claim 48 furthercomprising a substrate holder within the chamber.
 50. The apparatus ofclaim 49 wherein the substrate holder is in a path of the radiation. 51.The apparatus of claim 49 wherein the substrate holder is configured toregulate a temperature of a substrate held thereby.
 52. The apparatus ofclaim 49 wherein the substrate holder includes a heater for heating asubstrate held thereby.
 53. The apparatus of claim 49 wherein thesubstrate holder is configured to retain a semiconductive material waferwithin the reaction chamber, and wherein the microwave source isconfigured to emit a phased array of microwave radiation into thechamber and across an entire surface of a semiconductive material waferretained within the chamber.
 54. The apparatus of claim 49 wherein thesubstrate holder is configured to retain a semiconductive material waferwithin the reaction chamber, and wherein the microwave source is aphased array antenna which extends across an entirety of asemiconductive material wafer retained within the chamber.
 55. Theapparatus of claim 48 wherein the window comprises quartz, mica orplastic.
 56. The apparatus of claim 48 wherein the window consistsessentially of quartz.
 57. The apparatus of claim 48 wherein themicrowave source is configured to emit a phased array of microwaveradiation into the chamber.
 58. A deposition apparatus, comprising: areaction chamber comprising a window; a microwave source external to thechamber and configured to emit microwave radiation through the windowand into the reaction chamber; an inlet port extending through themicrowave source and into the reaction chamber; the inlet port extendingthrough the window and terminating in an opening under the window; a gasdispersion plate within the reaction chamber and beneath the opening ofthe inlet port; and a substrate holder within the chamber and beneaththe gas dispersion plate.
 59. The apparatus of claim 58 wherein thesubstrate holder is configured to regulate a temperature of a substrateheld thereby.
 60. The apparatus of claim 58 wherein the substrate holderincludes a heater for heating a substrate held thereby.
 61. Theapparatus of claim 58 wherein the window comprises quartz, mica orplastic.
 62. The apparatus of claim 58 wherein the window consistsessentially of quartz.
 63. The apparatus of claim 58 wherein the gasdispersion plate comprises quartz, mica or plastic; and has a pluralityof openings extending therethrough.
 64. The apparatus of claim 58wherein the gas dispersion plate consists essentially of quartz having aplurality of openings extending therethrough.
 65. The apparatus of claim58 wherein the window and gas dispersion plate consist essentially ofquartz.
 66. The apparatus of claim 58 wherein the microwave source isconfigured to emit a phased array of microwave radiation into thechamber.
 67. The apparatus of claim 58 wherein the substrate holder isconfigured to retain a semiconductive material wafer within the reactionchamber, and wherein the microwave source is configured to emit a phasedarray of microwave radiation into the chamber and across an entiresurface of a semiconductive material wafer retained within the chamber.68. The apparatus of claim 58 wherein the substrate holder is configuredto retain a semiconductive material wafer within the reaction chamber,and wherein the microwave source is a phased array antenna which extendsacross an entirety of a semiconductive material wafer retained withinthe chamber.